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By Edward F. Winter, C. E. Ruoff

A silicon solid-state array image scanner is described. This paper deals with structural and performance properties of the array which basically consists of PIN photo and gating diodes, and low capacitance isolation diodes. Each chip of the array is composed of an 8 by 9 matrix of photo detector cells; each cell contains one each of the three diode types mentioned. This x-y matrix is read a column at a time with an access delay of approximately 100 nsec per column. It is designed to detect the presence or absence of illumination within 10-mil diam image spots located on a 15- by 15-mil grid. Radiant power level of an illuminated spot is low; of interest is the range around I uw with a of 8400g Structural improvements to the original array which will result THE purpose of this paper is to describe the results of a solid state scanner exploratory development activity. The scanner is intended to sense the presence or absence of low-level illumination falling upon a matrix of 10-mil wide squares arranged on a 15- by 15-mil x-y grid pattern. The light of interest has a wavelength of 8400, characteristic of radiation emitted from a GaAs lasing diode. This wavelength matches well the spectral absorption of silicon,' thus the well-developed silicon processing technology can be applied to fabricating large integrated arrays of PIN photocells to sense the radiation. The illumination state of the cells of the array is read, one column at a time, by addressing a drive line of the particular column in question and examining the state of those sense lines which are orthogonal to the drive Lines of in greater sensitivity at various wavelengths, both above and below 8400Å, and in greater speed are presented. These include variations in diffusion depth, resistivity of N and P regions, isolation techniques, and packaging. Trade-offs between access speed, cycle frequency, and sensitivity are discussed. A packaging approach to achieving an array composed of several chips is described. Requirements on this package are: 1) maintenance of 15- by 15-mil pitch of the light sensitive cell position, therefore positional accuracy of mounted 8 by 9 cell photo detector chips; 2) maintenance of inherent high array speed even though signal levels are low through high density close proximity mounting of monolithic sense amplifier circuitry. the array. One bank of N sense amplifiers is required, where N is the number of photodiode cells in each column of the array. CELL AND CHI" STRUCTURE A photograph of a single monolithic cell is shown in Fig. 1. Each cell is composed of three junctions, an isolation junction, a logic or blocking diode junction, and a photodiode junction; all of these junctions are connected electrically by a common N region. An electrical schematic of four cells of the array is shown in Fig. 2 with the associated driver and sense amplifier circuits in block diagram form. Note the common cathode configuration of the three diodes of each cell. Fig. 3, a diagram of the cell vertical struc ture, illustrates how the electrical configuration of

Jan 1, 1970

By M. R. Lorenz

Efficient visible light emission from p-n junctions in semiconductors is currently achieved in the four materials, Sic, GaP, ]Ga1-xAs and GaAs1-x,. Recent advances in materials preparation and p-n junction formation are briefly reviewed. The radiative recombination processes in the different materials depend largely on the band structure and the impurity states of each material. The spectral distribution of the emission ranges from the blue in Sic, to green in Gap, yellow in Sic and red in Gap, Ga1-x AlxAs and GaAs1-x Px. The origin of the various processes are discussed. The conversion of the electrical power into optical power and the measurement of the conversion efficiency are reviewed. The currently maximum quantum efficiencies at 300°K are: 3 pct in GaP(red), 1 pct in SiC(yellow), 0.1 pct in GaP(green), 0.2 pct in Ga1-x AlxAs at 66001, and 0.1 pct in GaAs1-x Px at 6800. The brightness and the interplay of the quantum efficiency and the luminous efficiency are given detailed consideration. VISIBLE light generated by the application of a direct current to a semiconductor crystal was first observed by Lossev1 in 1923. Light emission came from naturally occurring junctions in Sic crystals but little was known then with regard to the mechanism of charge transport and light emission. Some nearly 30 years later and with a vastly increased understanding of semiconductors the phenomenon of electroluminescence was studied in more detail, for example in p-n junctions of germanium.2 In these early studies, the efficiency of converting the electron current into a photon current was very low and therefore aroused little interest toward practical application. More recently it became apparent that in certain materials, for instance GaAs, and under certain conditions, the conversion efficiency was not low at all.3 The subsequent discovery of the p-n junction laser4-6 provided the impetus for increased studies of electroluminescence. Light emitted from GaAs occurs in the infrared region of the electromagnetic spectrum and is not visible to the eye. At nearly the same time the use of GaAs1-xPx led to laser action at low temperatures which was visible to the eye.7 Later a red light emitting diode, made from Gap, was reportedS which emitted incoherent radiation at 300°K with an external quantum efficiency of about 1.5 pct. The fact that such efficient devices were obtainable led to a more concentrated effort in the search for highly efficient room-temperature semiconductor light sources. It is some of this later work on p-n junction luminescence with which we will be concerned here. Since our aim is centered on visible light, with hv =1.8 ev ( ?=7000?), only the wider band gap semiconductors are of interest, i.e., Eg 1 1.8 ev. Although many compounds meet this criterion, only a limited number of those are also good semiconductors, i.e. contain low resistance n and p regions. Some of the more promising candidates are listed in Table I. We will only be concerned with light generation from a p-n junction. This limitation excludes essentially the group II-VI binary compounds, although we will briefly review the case of ZnTe and the solid solution ZnTe1-xSex. As we will show they may contain a p-n junction but only of a special kind. Most of the discussion will deal with the four materials, Sic, Gap, Gal-xAlxAs, and GaAs1-xPx. These appear to be at the present time the best visible light emitting semiconductors. In the following sections we will briefly consider: 1) the electrical properties of p-n junctions; 2) some recent advances in materials preparation; 3) the formation of p-n junctions; and then in somewhat greater detail we will consider: 4) the various radiative recombination processes; 5) the measurement and observation of the external quantum efficiency; 6) the luminous efficiency; 7) the brightness of light emitting diodes (LED'S). THE P-N JUNCTION The p-n junction in a semiconductor crystal is the interface between two differently doped regions. More specifically the p region is doped predominantly with acceptor impurities and the n region contains predominantly donor impurities. The energy band structure of a degenerate p-n junction at thermal equilibrium is shown in Fig. l(a). The excess electrons on the n side of the junction are confined to this region by the barrier potential Eg. Similarly the excess holes on the p-side of the junction are confined to the p-region by a similar potential barrier. If we now apply a dc voltage V such that the p region is made positive and the n region negative, the barrier potential EB is reduced by the applied voltage, V and the junction is said to be forward biased. With the barrier potential lowered, electrons and holes can drift toward the p region and n region, respectively, see Fig. l(b). The current voltage characteristics of p-n junctions in most wide band gap materials can be described by the relation: J = Joexp(eV/BkT) [1] where the functional form of Jo is determined by the recombination mechanism. Jo is generally a complicated parameter which depends on a number of different factors including temperature, junction width, bias voltage, and carrier lifetimes. The parameter B also depends on the recombination mechanism but

Jan 1, 1970

By J. J. Tietien, R. O. Clough

A technique previously used to prepare alloys of InAs1-xPx and GaAsl-x Px, miry: the gaseous hydrides arsine and phosphine, has been extended to grow single -crystalline GaAs 1-x Sb x by replacing the phos-phine with stibine. Procedures were developed for handling and storing stibine which now make this chemical useful for vapor phase growth. This represents the first time that this series of alloys has been grown from the vapor phase. Layers of P -type GaSb and GaSb-rich alloys have been grown with the carrier concentrations comparable to the lowest ever reported. In addition, a p-type alloy containing 4 pct GaSb exhibited a mobility of 400 sq cm per v-sec which is equivalent to the highest reported for GaAs. RECENTLY, interest has been shown in the preparation and properties of GaAs1-xSbx alloys, since it was predicted1 that for compositions in the range of 0.1 < x < 0.5, they might provide improved Gunn devices. However, preparation of these alloys presents fundamental difficulties. In the case of liquid phase growth, the large concentration difference between the liquidus and solidus in the phase diagram, at any given temperature, introduces constitutional supercooling problems. It is likely that, for this reason, virtually no description of the preparation of GaAs1-xSbx by this technique has been reported. In the case of vapor phase growth, problems are presented by the low vapor pressure of antimony, and the low melting point of GaSb and many of these alloys. In previous attempts1 at the vapor phase growth of these materials, using antimony pentachloride as the source of antimony vapor, alloy compositions were limited to those containing less than about 2 pct GaSb. This was in part due to the difficulty of avoiding condensation of antimony on introducing it to the growth zone. A growth technique has recently been described2 for the preparation of III-V compounds in which the hydrides of arsenic and phosphorous (AsH3 and pH3) are used as the source of the group V element. With this method, GaAs1-xPx and InAs1-xPx have been prepared2&apos;3 across both alloy series with very good electrical properties. Since the use of stibine (SbH3) affords the potential for effective introduction of antimony to the growth apparatus, in analogy with the other group V hydrides, this growth method has been explored for the preparation of GaAs1-xSbx alloys. In addition to GaSb, these alloys have now been prepared with values of x as high as 0.8. In the case of GaSb, undoped p-type layers were grown with carrier concentrations equivalent to the lowest reported in the literature. Thus it has been demonstrated that, with this growth technique, all of the alloys in this series can be prepared. EXPERIMENTAL PROCEDURE A) Growth Technique. The growth apparatus, shown schematically in Fig. 1, and procedure are virtually identical to that described2 for the growth of GaAs1-xPx alloys, with the exception that phosphine is replaced by stibine.* HCl is introduced over the gallium boat to *Purchased from Matheson Co., E. Rutherford,N+J. transport the gallium predominantly via its subchlo-ride to the reaction zone, where it reacts with arsenic and antimony on the substrate surface to form an alloy layer. The fundamental limiting factors to the growth of GaAs1-xSbx alloys from the vapor phase, especially GaSb-rich alloys, are the low melting point of GaSb (712°C) and the low vapor pressure of antimony at this temperature (<l mm). Thus, relatively low antimony pressures must be employed, which, however, imply low growth rates. To provide low antimony pressures, very dilute concentrations of arsine and stibine in a hydrogen carrier gas were used. Typical flow rates (referred to stp) were about 4 cm3 per min of HC1 (0.06 mole pct)+ from 0.1 to 1 cm3 per min of ASH, (0.002 to 0.02 mole pct), and from 1 to 10 cn13 per min of SbH3 (0.02 to 0.2 mole pct), with a total hydrogen carrier gas flow rate of about 6000 cm3 per min. Although no precise data on decomposition. kinetics exist, it is known4 that stibine decomposes extremely rapidly at elevated temperatures. However, the high linear velocities attendent with the high total flow rate (about 2000 cm per sec) delays cracking of the stibine until it reaches the reaction zone and prevents condensation of antimony in the system. To improve the growth rates of the GaSb-rich alloys, growth temperatures just below the alloy solidus are main-

Jan 1, 1970

By Irwin Roman

In addition to projects such as those reported in parts I and II above, the Section of Geo-physics of the Federal Government has undertaken a considerable amount of fundamental research. Two such field-projects may be mentioned, one a magnetometric study in the Comstock Dis-trict of Nevada, and the other a resistivity-study of snow and ice. In addition to the field-problems, there have been two classes of research of a mathematical type. One of these has been the preparation of tables, scales, and charts for the important geophysical functions already known; the other has been the extension of the relations involved in the resistivity-problem. The magnetometric study at Spring Valley, in the Comstock District, was made for the pur-pose of determining the value of the magnetometer in extending the knowledge of a region, as ob-tained by purely geological means. The variations in the vertical magnetic intensity were mea-sured with an Askania balance at intervals of 20 feet, along lines as shown in Figure I.. These lines were 100 or 500 feet apart over an area approximately a rectangle 6000 by 7500 feet. In addition to the lines shown, two areas were selected for more intensive study. In one, short

Jan 1, 1940

By S. G. Cupschalk, F. A. Dahlman, J. J. Wert

Studies have been undertaken to determine the indicidual effects of particle size, degree of long-range ovder, antiphase domain size, and root mean square stran on the microhardness and yield strength of ordered alloys. Dnta have been analyzed for Cu3Pt initzally ordered to a value of 0.82 and after deformations of 1 and 6 pct. It was observed that deformation fleatly reduced the degree of long-range order. Furtherrnore, wztkin this range of relatively small deforntntlons, the average particle size changed very little while the antiphase domain size was greatly reduced. Smultaneosly, the mcrohardness changed by a factor of two durzng the deforrtation process. PREVIOUS studies have reported some of the effects of cold work on the broadening of X-ray diffraction peaks. These investigations were performed on powder and wire samples representing both ordered and disordered states; i.e., the specimens were initially studied in a severly cold-worked condition. By comparing the difference in line shape between the annealed and cold-worked peaks, fundamental information was obtained concerning particle size, strain distribution in different crystallographic directions, degree of long-range order, and change in antiphase domain size. Considerable theoretical work has been done concerning the analysis of diffraction data obtained from cold-worked metals. Stokes&apos; expressed the change in diffraction profiles in terms of Fourier coefficients. Much of the work in this area has been summarized by warren2 in an extensive review article concerning the analysis of plastic deformation by X-ray diffraction. Cohen and Bever3 applied these techniques in studying the effects of cold work on alloy systems exhibiting long-range order. They utilized the Fourier coefficients of fundamental peaks in conjunction with those of the superlattice peaks to determine the change in antiphase domain size. Little work of this nature has been reported for ordered systems that have undergone small degrees of plastic deformation. The purpose of this investiga-tion was to determine the effects of small deformations in such a material with respect to particle size, strain distribution in various crystallographic directions, antiphase domain size, degree of long-range order, and hardness. EXPERIMENTAL PROCEDURE CusPt was used for the initial investigation since the order-disorder transformation takes place with- out a change in crystal structure. The transformation is readily detectable via X-ray diffraction techniques due to the large difference in the scattering factors of copper and platinum. Additionally, the alloy is relatively low melting (approximately 1300°C) and is easily deformable in both the ordered and disordered states. 1) Specimen Preparation and Cold Working. A 100-g, 12-in. diam., cylindrical specimen of Cu3Pt was prepared by melting and casting 99.99 pct pure Cu and Pt i.n vacuo. Prior to any mechanical working, the material was homogenized in a vacuum for 60 hr at 100O0C, and surface defects were removed by machining to a depth of approximately 116 of an in. The material was then cold-rolled, with an intermediate anneal, into a strip approximately 12 in. wide by 14 in. thick. Straightening and flattening removed another 0.025 in. from the thickness. After a recrystallization treatment at 750°C for 30 min, the specimen was slow-cooled from 55OoC, at the rate of 6°C per hr, down to 150°C to induce superlattice formation. This treatment yielded an ASTM grain size of 7 and a degree of long-range order equal to 0.83 0.06. After obtaining X-ray and Knoop hardness data, the sample was cold-rolled approximately 0.75 pct in one pass through a hand-operated jewelers&apos; mill. X-ray and hardness data were again obtained and the specimen was reduced an additional 5.41 pct in a single pass through the mill. 2) X-Ray Measurements. The specimen was examined in the ordered condition and after the two degrees of cold working previously mentioned using a General Electric XRD-5 unit equipped with a spectrometer and scintillation counter. Using Mo-Ka radiation with a zirconium filter, six orders of the 100 reflection were obtained. It was anticipated that point counting would be necessary for an accurate determination of the low-intensity peaks and tails: however, it was demonstrated that, by using a scanning speed of 0.2 deg per min and the appropriate time constant, the recorded data were sufficiently accurate. Thus, for ease of experimental procedure, all peaks were recorded on chart paper. Specimen position in the holder was considered to be insignificant after making a series of measurements of the same peak area in different positions with respect to the beam. Since peak overlapping did occur at high values of 20, it was necessary to separate the peaks graphically prior to analyzing the data in order to minimize this source of error. The peak tails were also carefully drawn to obtain the best possible data. Fourier coefficients of the line profiles were calculated on an IBM 7072 computer, and graphical meth-ods2j3 were employed in analyzing the results. For this type of calculation, in which the line profile is represented by intensities taken at set intervals, the intervals selected must be sufficiently small to give an accurate representation of the line profile. It was decided that for 20 = 0.02 deg the line profiles were

Jan 1, 1967

By Y. C. Liu, G. A. Alers

Using X-ray pole-figure information and the single-crystal elastic constants, the angular variation of an elastic modulus in a polycrystal can be calculated and compared to measured clalues. This procedure has been used in the past to provide supporting ecidence for a particular choice of ideal orientations in the description o the X-ray pole figure. Since it is well-known that the absolute value oj an elastic modlus oj a poly crystal cannot be acczrralely calculated from the single-crystal elastic constants, there exists a serious question about the reliability oj this modulus method in the study of textures. This paper deriz-es sez3eral simple fornzulae for the ntzgular lariatiion of Young&apos;s modulus in the plane o a rolled sheet sing the same ssuinptions which lead to the lack oj detinztion of the absolute c&apos;alre OJ the elastic ,nodulus. The vesults show that, although the absolute isallre oj Young&apos;s modulus depends strongly on the assumptions made, the shape of the modulus vs angle curve is not very sensitive to the assumptions and thus can be used reliably in texture studies. Exatzples oj&apos; using this criteriotz are illustrated in the text. NeARLY all poly crystalline materials have some preferred orientation in the arrangement of their grains and hence exhibit anisotropy in their properties. This preferred orientation is usually measured and studied by X-rays which yield detailed information on the statistical distribution of grain orientations in the form of pole figures. The usefulness of these pole figures in theories of texture formation and in predictions of properties has come to depend almost entirely on the characterization of the pole figure by one or more ideal orientations. Unfortunately, this characterization is not unique and different authors often present different ideal orientations to characterize a given pole figure. In order to distinguish between these different choices of ideal orientations, it is necessary to go beyond X-rays and consider other physical properties which reflect the texture&apos; simply because any choice of ideal orientations must predict correctly the observed anisotropy in all physical properties. The most common example of this procedure has made use of the angular variation of Young&apos;s modulus with respect to the rolling direction in the plane of a rolled sheet.3 4 Here the anisotropy can be measured easily and it can also be calculated from the single-crystal elastic constants and the chosen ideal orientation. Unfortunately the methods used to calculate this anisotropy were chosen for their simplicity rather than for their mathematical rigor so that there exists a serious question as to the validity of conclusions reached by this modulus method. It is well-known5 that the absolute value of the Young&apos;s modulus of a polycrystalline aggregate cannot be calculated very accurately because different mathematical averages over the grains yield different results. It is one purpose of this paper to examine the effect of different averaging procedures on the calculated anisotropy of Young&apos;s modulus in the rolling plane of rolled sheets in order to see if this property can be used reliably in texture studies. This particular modulus and type of material were chosen because the modulus is easily measured and rolled sheet is technologically important. The results show that, although different averages yield different absolute values for Young&apos;s modulus, the shape of the modulus vs angle curve is not very sensitive to the averaging procedure and thus can be used as a criterion to check the various ideal orientations used to characterize the X-ray pole figure. Examples of this checking procedure are given in the final section. Another purpose of this paper is to examine the possibility of using the anisotropy of Young&apos;s modulus as an indicator of texture without reference to pole figures or ideal orientations. Such a use would require that different textures yield quite different shapes for the modulus vs angle curve so that the distinction between textures would be quite clear. The experimental results presented in the final section indicate that there is easily enough variation in shapes to allow modulus measurements to be useful texture indicators, par-

Jan 1, 1967

By R. C. Ku, A. J. McEvily, T. L. Johnson

AS reported in a recent paper,&apos; we attempted to measure the response to stress of as-quenched Fe-Ni-C martensites (Ms of -35°C) in both the micro-and macrostrain regions. To avoid effects associated with the diffusion of carbon, tensile specimens were quenched from room temperature at 78°K and tested after 15 min in situ. It was assumed that the transformation had terminated and that the retained austenite was essentially stable. In the tensile tests microplastic strains of the order of 10"* were measured at stresses below 20 ksi. It was concluded that the observed strains were due to the motion of dislocations in the martensite, the dislocations having been introduced during transformation. It was argued that transformation or plastic deformation of the retained austenite did not contribute to the non-elastic deformation measured in the microstrain region. In contradiction to the above argument, Magee and paxton2 have more recently shown that the strain due to isothermal transformation of retained austenite to martensite can contribute to plastic deformation at low stresses even at 78°K. Moreover we were unaware (nost)-a culpa) of a paper by Machlin and cohen3 in which it was clearly shown by resistance measurements that isothermal transformation at 78°K leads to the formation of an additional 1 pct or so of martensite after the initial athermal transformation, even in the absence of external stress. We have verified Machlin and Cohen&apos;s results in the following manner. A capacitance microstrain gage was placed on a tensile specimen before immersion in liquid nitrogen. After 15 min at 78°K detectable burst phenomena had ceased and it was then possible to obtain a continuous record of the additional extensional strain due to spontaneous isotherma1 transformation. The results for the Fe-Ni-C series studied are shown in Fig. 1, and are similar to those of Machlin and Cohen who investigated a low-

Jan 1, 1968

By C. M. Wayman, S. R. Rauze

It was recently reported&apos; that the initial transformation in (100) iron whiskers grown in the bcc condition can be nucleated on heating in regions of the whisker which are not necessarily the hottest. Although this behavior was observed1 several times, its sporadic nature precluded any documentation other than occasional visual observations during hot-stage optical-microscope heating experiments. The purpose of this communication is to report how, in one instance, the a-y transformation in such a (100) iron whisker was initiated in a region which was clearly at a lower temperature than an adjacent region which did not transform at all.

Jan 1, 1967

By J. E. Cannaday, R. J. Austin, R. K. Saxer

PREVIOUS investigators have determined activation energies and have postulated various controlling mechanisms for creep.&apos;-&apos; Recently Barrett et 01.I5 have suggested, as the result of their work with cadmium, that the apparent activation energies for creep (AHc) above 0.5 T, could be correlated by means of activation energies for self-diffusion (AHSD) and modulus of elasticity functions: AHC = AHSD - (5RT/E) dE/dT. The wide disparity of apparent activation energies previously obtained with nickel compared to those reported for other fcc metals and the desire to test the postulate of Barrett el al. prompted this study. The as-received 17.5-mil nickel wire used during this work assayed 99.87 pct pure, Table I. X-ray analysis indicated that the wire was in a stress-re- lieved state and metallographic examination revealed an equiaxed grain size of approximately 0.01 mm. Specimens degreased in acetone and cut to 1-1/2 in. lengths were tested in a cam-mechanized constant-stress creep machine. A vacuum of at least lo-5 mm Hg was maintained during all tests. Stresses were applied when thermal equilibrium was established. When a measurable (at least 0.5 pct) secondary creep was observed, the temperature was pulsed to a higher temperature. Pulsing time varied from 30 sec at 480°C to 2 min at 1300&apos;C and above. Slopes of creep curves were determined after the initial acceleration in the strain rate had subsided and steady-state creep was achieved. To confirm the results obtained, additional tests were performed incorporating a temperature pulsing method suggested by sherby. In this method the load was removed during temperature pulsing and reapplied after thermal expansion had occurred. No appreciable differences in results were obtained. Tests were performed over a wide range of temperature (470" to 1310°C) and stresses (250 to 17,000 psi). The expression was used to calculate activation energies. In this expression T1 and T2 are the initial and final temperatures, and el and i2 are the creep rates at T, and T2. The variation of the apparent activation energies with the mean test temperature calculated by means of Eq. [I] are shown in Fig. 1. The mean test temperature (Tmean) was calculated from the relationship

Jan 1, 1967

By Donald Ofte

LIQUIDUS temperatures of molten alloys were measured in an oscillating-cup viscosimeter by observing the abrupt increase in the alloy viscosity when the apparatus was cooled below the alloy liquidus temperature. The liquidus transformation can be an elusive thermal effect in an alloy system where a small amount of material is involved in a low-enthalpy liquidus reaction, or where other unfavorable physical conditions interfere. Using the viscosity technique, liquidus temperatures were measured in binary alloys of plutonium with cerium, gallium, and iron, as well as ternary Pu-Ce-Co alloys. The previously described oscillating-cup viscosimeter1 is a torsion pendulum consisting of a right circular, cylindrical tantalum cup fitted to a rigid shaft which, in turn, is suspended by a torsion fiber in a highvacuum system. When the torsion pendulum is placed in oscillation the viscosity of the liquid contained in the cup is a function of both the decay of the oscillation caused by the viscous drag of the liquid contained in the sealed tantalum cup, and the period of the oscillation. The period is measured by a photo-electrically operated timer to the nearest thousandth of a second. Prior to each measurement, the apparatus is held at temperature between 5 and 18 hr to assure thermal equilibrium throughout the 8 to 10-cc alloy sample. When the cup, filled with a liquid metal, is oscillating. only a very thin outer layer of the fluid is in motion. This moving annulus represents the liquid&apos;s contribution to the moment of inertia of the torsion pendulum. When the viscosity increases, more liquid is placed in motion, and the slight increase in the moment of inertia causes a corresponding increase in the period of oscillation.

Jan 1, 1967

By V. Kondic, W. M. Rumball

HUNT and Jackson&apos; have recently suggested that binary eutectics might be classified according to the entropy of fusion of the component phases. Such a classification was in fact proposed2 some time ago by the authors and the purpose of this communication is to present some supporting evidence. As pointed out by Hunt and Jackson&apos; typical metals of low entropy of fusion, ?S, tend to form normal eutectics (using Scheil&apos;s terminology3). Where one phase is metallic (low ?S) and the other nonmetallic (high AS) then anomalous structures are formed. These anomalous structures may either be regular (e.g., Bi-Sn)or irregular (e.g., A1-Si). Finally Hunt and Jackson suggest that where both phases are of high ?S regular faceted structures are formed. In the proposed classification2 the ratio of the entropies of fusion is taken as the quantitative parameter, i.e., ?Sa/?SB = E, where e > 1.0. An extensive literature survey has been carried out2,4 for reliable photomicrographs of eutectic structures. The structures, numbering 151, have been classified into two classes, viz., normal (i.e., lamellar and rodlike) and anomalous. The latter group has been arbitrarily subdivided into regular and irregular anomalous eutectics. Details and sources of the structures are given elsewhere.2,4 In the absence of better thermodynamic data the value of E has been determined for each of the systems making the following assumptions and approximations: l) The entropy of fusion of solid solutions may be calculated additively;5 ii) Inter metallic compounds are treated similarly but with the addition of the following term for fully ordered structures.5 -4.573(Ni lOg10 Nl + N2 log10 N2) where Nl and N2 are the atomic fractions. It might be argued that the entropies of fusion are meaningless as the eutectic phases form at some temperature (T,°K) below their true melting point (Ta or Tb). As AS, = Lo/To if La the latent heat of fusion of a, is assumed independent of temperature, the actual entropy change AS& is given by La/Te. The ratio of entropies of fusion then becomes Fig. 1 shows E&apos; plotted against cumulative totals for normal and anomalous systems from which it is seen that normal eutectics predominate at low values of E&apos;; e.g., some 90 pct of normal systems lie below E&apos; = 1.5 with 65 pct of anomalous systems above this value. Fig. 1 also shows that the regular anomalous structures occur mostly at low values of c&apos; possibly suggesting growth more akin to normal than anomalous growth. The choice of c as a classification parameter was based on nucleation concepts, it being observed that metals widely separated in Sundquist and Mondolfo&apos;s8 nucleation series were anomalous and those close together normal. The basis of these classification views is really outside the intended scope of this communication but it is hoped to explain them fully in the near future.7 Having arrived at this entropy of fusion classification by nucleation considerations it is interesting to note that Hunt and Jackson&apos;s ideas are based on growth considerations. Elsewhere one of the authors4 has shown that an even better classification of the metallographic structures reviewed is obtained from purely conventional heterogeneous nucleation concepts. It has been found that systems having a value of the parameter +b less than 0.28 are almost certainly normal and above this anomalous: V, is the gram atomic volume. This parameter is nevertheless closely related to c and c&apos;, these being an approximation of p. The parameter is also related to the other classification3,8,9 which have met with any success in the past. All these classifications are to be reviewed shortly by the authorsU7 A significant thing about the classifications based on

Jan 1, 1968

By B. D. Lichter

In a previous paper, Oelsen, Schuermann, and Hey-nertl pointed out the possibility of obtaining complete thermodynamic functions for alloy systems from calorimetric measurements alone. Specifically, if the heat content of a heterogeneous, multicomponent system is known as a function of temperature and composition, then it is possible to derive the heats, entropies, and free energies of formation of liquid phases and of solid intermediate phases of fixed composition. The authors present equations and graphical techniques applicable to eutectic systems and systems with intermediate phases without solid solubility at lower temperatures. eijering has considered possible extension of the treatment to systems with complete solid-state miscibility at lower temperatures; however, experimental difficulties practically restrict the method to systems with very limited miscibility in the solid state. The purpose of this note is to present an alternative derivation of the heats and entropies of formation of liquid phases and of solid intermediate phases from heat-content measurements alone. Fig. 1 shows three types of phase diagram to which the analysis may be applied. If the heat content is determined as a function of composition x, at temperature T, we have quite generally and the heat of mixing of the liquid is obtained directly from heat-content measurements. If the temperature T lies in a two-phase region (solid-liquid) then

Jan 1, 1967

By Charles L. Mantell, B. G. Shah

SINCE the beginning of the industry, commercial electrolytic manganese has followed the Shelton patent&apos; among others, which called for the addition of sulfur dioxide in controlled amounts, to a purified manganese sulfate-ammonium sulfate at a controlled pH. Every attempt to eliminate sulfur dioxide additions has resulted in operating difficulties, chiefly solution of the deposited metal and lowered current efficiencies. Many replacements for sulfur dioxide have been proposed and studied, chiefly sulfur compounds, urea, thiourea, and proteins similar to those employed successfully in copper refining. It has been suggested that sulfur dioxide is a re-ductant for higher-valence manganese compounds, or that it is reduced by manganese metal in the deposit to hyposulfites or its compounds, and that these might affect the cathode film or the deposition potential, or the overvoltage of manganese. The additives were studied following the method of Mantel1 and Ferment2 who determined the feasibility of current-potential curves as an analytical tool for monitoring manganese elec trowinning solutions for metallic impurities: nickel, cobalt, silver, copper, zinc, molybdenum, cadmium, magnesium, and sodium. The individual effect of each on the standard polarization was determined for a range of concentrations. Not all affected the polarization curve; cadmium, magnesium, and sodium had no effect. Nickel, cobalt, silver, copper, and zinc yielded a correlation between transition current and concentration of impurity.

Jan 1, 1968

By N. A. Gjostein

From their study of the anisotropy of grain boundary mobility in aluminum, the authors conclude that tilt boundaries have a higher mobility than twist boundaries because the atomic misfit at the pure-twist boundary is relatively small compared to the misfit at a tilt boundary for a given amount of misorientation. If this is true, then one would expect a twist boundary to have a lower grain boundary energy than the corresponding tilt boundary. Fig. 6, taken from the work of Gjostein and Rhines,10 shows that this is indeed the case for [001]-cu tilt and twist boundaries in the high-angle region, thus lending support to the authors&apos; conclusion.

Jan 1, 1968

By J. A. Lund, A. M. Lawson

THE structures of quenched eutectoid and hypereu-tectoid Fe-Cu alloys have been examined by X-ray diffraction and by optical and electron microscopy. The relevant portion of the Fe-Cu phase diagram is given in Fig. 1. Several values have been reported for the solubility of copper in a Fe at the eutectoid temperature, including 1.4 wt pct by orton&apos; and 2.13 wt pct by Wreidt and Darken.2 Alloys containing 4.8 and 7.5 wt pct Cu have been prepared from two batches of Ferrovac E iron (0.005C and 0.013C) and electrolytic tough pitch copper (99.90 Cu). Specimens of dimensions 0.8 by 0.8 by 0.1 in. were cut from hot-rolled material, austenitized, and quenched into brine at 25°C. Similar specimens were also cooled in the furnace, after a short soaking treatment at 1100°C, at a rate estimated to be 10°C per min in the temperature range of 900" to 500°C. X-ray diffractometry was performed on quenched and on furnace-cooled bulk specimens using iron radiation. Only a bcc phase could be detected in all samples. Lattice parameters were calculated from measurements on four lines, made up of two resolved high-angle doublets. Comparisons were made against a silicon standard. Results are shown in Table I. Based on X-ray diffraction studies of a series of alloys of lower copper concentrations, orton&apos; estimated that the tattice constant of a Fe at 25°C increases 0.0014A per wt pct Cu in solution. Extrapolating Norton&apos;s data, it may be concluded that all copper was retained in solution in the brine-quenched 4.8 pct Cu alloy, and that approximately 5 pct Cu was also held in solution on quenching the 7.5 pct Cu alloy. Typical microstructures of brine-quenched specimens, as observed by optical microscopy, are shown in Figs. 2 and 3. Precipitation of the E phase (copper-rich) occurred along the y grain boundaries on quenching the 7.5 pct Cu alloy, rendering them readily detectable in the microstructure, Fig. 3. The original boundaries in the 4.8 pct Cu specimens were gener- ally not discernible, however. This indicates that the z phase which was seen in the higher-copper alloy was probably of proeutectoid origin. Thin foils for transmission electron microscopy were obtained from bulk specimens by spark machining to 0.006 in. thickness, followed by electrolytic polishing. Typical transmission electron micrographs

Jan 1, 1967

By E. T. Turkdogan, Klaus Schwerdtfeger

OelSEN and Maetz1 detected some 20 years ago the existence of a miscibility gap in iron oxide-CaO-P2O5 slags melted in iron crucibles at about 1400°C. Because of the importance of this system for the dephos-phorization of steel in the basic Bessemer process, equilibria between liquid iron and selected iron oxide-CaO-P2Q slags have been measured since by numerous investigators.2-5 When in equilibrium with metallic iron, the iron oxide of the slag is present mainly as FeO. In connection with oxygen-blowing steelmaking processes, it is useful to know the phase relations in the slag system at higher oxygen pressure, when major parts of the iron oxide are present as Fe2O3. This problem was investigated by Turkdogan and Bills7 by equilibrating the oxide mixtures contained in platinum crucibles with CO2-CO mixtures at 1550°C. It was found that increasing the Fe2O3 content decreases the composition range of the miscibility gap strongly so that the miscibility gap has almost disappeared at pco2/pco = 75. This result was refuted by the careful work of Olette et a1.,&apos;&apos;&apos; who equilibrated their slags with controlled Ha-H2-Ar gas mixtures. Their equilibrium measurements, at 1600°C and at oxygen pressures of 5 x 10"* and 10"5 atm, showed that the oxidation state of the iron has almost no influence on the formation of the miscibility gap. The present experiments were undertaken to check the previous results of Turkdogan and Bills. The experiments were performed at 1625°C in the strongly oxidizing atmosphere of air (PO2 = 0.20 atm) for which no experimental data are available. About 10 g of slag were melted in platinum crucibles and held at constant temperature for 1 hr. After equilibration, the crucible was rapidly pulled out of the furnace and cooled in air. The platinum crucible was removed from the sample. The two slag layers were carefully separated with a small diamond disc, and the surface of the top layer, which may have changed its oxidation state during cooling, was removed. The slags were crushed and analyzed chemically for CaO, P2O5, Fe2+, and Fetotal. The starting mixtures were prepared by sintering the desired amounts of reagent-grade 2CaO . P2O5 - H2O, CaCO3, and Fe2O3. Sintering and subsequent crushing were done three times to ensure homogenization. Molybdenum wire resistance heating was used. The furnace was provided with a recrystallized alumina reaction tube which was left open to air at the top. The temperature was controlled electronically. The reported temperature was measured with a Pt/Pt-10 pct Rh thermocouple and is estimated to be accurate within +5°C. The composition of the equilibrated melts is given in Table I. For the graphical illustration of these quaternary slags the type of projection suggested by Trömel and Fritze10 was used. In this representation, Fig. 1, the composition point of a mixture within the tetrahedron Fe2O3-CaO-P2O5-FeO is projected into the Fe2O3-CaO-P2O5, triangle (triangle I) so that the direction of projection is parallel to the side FeO-Fe2O3, and into the triangle Fe2O3-P2O,-Fe0 (triangle 11) so that the direction of projection is parallel to the side CaO-P2O5, of the tetrahedron. The projected point has the coordinates wt pct CaO, wt pct P205, and wt pct (FeO + Fe2O3) in triangle I and wt pct FeO, wt pct Fe2O3, and wt pct (CaO + PzO5) in triangle 11. Both triangles are turned into the same plane around the Fe203-P20, side of the tetrahedron. An illustration of the projection of a quaternary point in the present system is shown in Fig. 1. The advantage of this type of projection is that all four components for an equilibrium curve can be read directly from the diagram. The present results are shown graphically in Fig. 2. The curves depicting the miscibility gap are dashed in parts where no experimental points were obtained. The composition range covered by the miscibility gap

Jan 1, 1968

By N. J. Olson, G. W. Toop

A regular solution is characterized by a finite molar heat of mixing and entropy due only to ideal or random mixing. The thermodynamic properties of binary regular solutions which exhibit constant atomic coordination number and constant atom-atom intefac-

Jan 1, 1967

By J. E. Hilliard

AS is well-known, the length per unit volume, Lv, of any lineal feature (such as grain edges in a polycrys-talline specimen) can be estimated from a count of the number of point intersections with a random plane of polish. Specifically:&apos; Lv = 2NA in which NA is the expected number of intersections per unit area of the plane. As with all other measurements in quantitative metallography, the estimation of Lv is subject to a sampling error, the magnitude of which will depend on the number of observations. The analysis is usually performed by counting the number of intersections falling within a closed test figure of known area applied to a succession of different areas on the plane of polish. The test figure can be drawn directly on the screen of a projection microscope or else superimposed on the image of the structure by means of a reticule in a focusing eyepiece of an ordinary microscope. The use of micrographs is very inefficient unless, as in the present study, these are also needed for some other purpose. Consider an analysis in which n applications are made of a test figure within which the expected number of intersections is N. The expected total number of intersections counted is then given by NT = nN If (N) is the standard deviation in N for one application of the figure and if the latter is applied to non-overlapping regions so that the N&apos;s are independent in the statistical sense, then the standard deviation in Nt is given by: a(NT) = a(N)vn Eliminating n from Eqs. [2] and [3] we obtain: Thus, k will be a constant for a given specimen and test figure. From Eqs. [ I] and [4] we find As is to be expected, therefore, the fractional error in the estimation of Lv is inversely proportional to the square root of the total number of intersections counted. It is very desirable to have at least a rough estimate of k before starting an analysis, since it will then be possible to decide in advance by use of Eq. [5J how many counts should be made in order to achieve the desired accuracy in Lv. Without such information the investigator, unless lucky, will either do needless (and tedious) work or else obtain a result with too large an error. It is very easy to calculate k for the limiting case of N — 0, i.e., when the test figure is vanishingly small. In this case there is a negligible probability of two or more intersections falling within the figure. There are therefore only two possible outcomes: a count of one with a probability of, say, p and a zero count with a probability of (I-p). Thus and Therefore: We might expect k to depend on N and therefore on the size of the test figure. Such a dependence was observed2 in the analogous case involving the estimation of grain-boundary area per unit volume by a count of the number of intersections of a test circle with traces of the boundaries on the plane of polish. In this case the theoretical value of k at the limit N — 0 was 1.41. It was also predicted that k would display an initial sharp decrease with increasing N. Experimentally, k was observed to decrease to a value of 0.62 at N - 6 and thereafter remain approximately constant. Furthermore, the value of k for N > 6 was found to be insensitive to the form of the structure provided no pronounced anisotropy or grain-size variation was present. In order to determinewhether k would exhibit a similar dependence on N in the estimation of grain-

Jan 1, 1967

By W. C. Winegard, C. J. Simpson, C. J. Beingessner

VARIOUS organic compounds, such as borneol, carbon tetr a bromide, and hexachloroethane, solidify as transparent plastics with a fcc structure. Each of these substances undergoes a solid-state transformation from the plastic phase to a brittle phase at temperatures slightly above 20°C. Since it was known that these plastic crystals solidified like metals,1 it was decided to investigate the possibility that solid-state grain growth would occur in the same way as it does in metals. Two-dimensional grain growth in thin films of plastic organic compounds has been studied with the aid of cinemicrophotography. Samples varying in thickness between 250 and 1000 @ were prepared by subliming a thin layer of the compound onto a microscope slide plate which was then covered with a second slide plate.

Jan 1, 1968

By S. A. LoPilato, J. T. Smith

SEVERAL techniques have been evaluated for cooling the throat area of rocket-nozzle inserts to prevent erosion or fracture of the inserts during exposure to high operating temperatures and pressures. Self-cooled composites, such as infiltrated tungsten, have shown considerable promise for these applications. These composites can be fabricated by infiltrating the refractory matrix with a lower-melting metal or non-metal which is insoluable in tungsten. During firing, the lower-melting substance undergoes a series of continuous endothermic phase changes which absorb sufficient heat to maintain the nozzle matrix material at or below a safe operating temperature. At present, the state-of-the-art has reached a point where the refractory matrix density and microstruc-ture have been established as the critical parameters to be controlled for optimum self-cooled performance.&apos;" Nondestructive testing has been utilized to ensure that porous tungsten billets were of uniform density and free from cracks or other defects prior to fabrication into rocket nozzle inserts. Ultrasonic-velocity techniques have been employed because of their reliability and reproducibility. The purpose of this note is to present and interpret the test data developed for porous tungsten matrices. For evaluation purposes, tungsten powders with Fisher subsieve sizes of approximately 4 and 18 p have been obtained for study from four commercial sources: the General Electric Co., Wah Chang Corp., Fansteel Metallurgical Corp., and Kennametal, Inc. Porous tungsten matrices were fabricated from the powders by hot pressing in induction-heated graphite die assemblies. Typical billets ranged from 3 in. diam, 2 in, high to 5 in. diam, 5 in. high. The ultrasonic-velocity measurement technique employed was through transmission, pulse echo at a frequency of 1.0 mc using matched barium titanate crystal transducers. The testing equipment included a pulsed ultrasonic generator, an amplifier, a specimen holder, and an oscilloscope, as shown in Fig. 1. The porous tungsten thickness was measured to i 0.0005 in, with precision micrometers while the oscilloscope achieved 0.02 psec time measurement accuracy. The time for a sound wave to pass through the billet, the bulk wave velocity, was calculated to 0.5 pct using Eq. [l]: V-} where V = bulk wave velocity, in. per psec, T = specimen thickness, in., and / = time, psec. To develop inspection standards, the bulk density of a porous tungsten billet was determined by the ASTM water-immersion technique.3 The ultrasonic-velocity measurements were completed at seventeen positions for each billet and averaged to develop a characteristic standard velocity for a particular tungsten powder at several density levels. A plot of ultrasonic velocity vs density is presented in Fig. 2 for six different tungsten powders. This graph has been established as

Jan 1, 1967